Esmat Farzana

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Education and Appointments Postdoctoral Researcher, Materials Department, UC Santa Barbara (2019-August 2023) The Ohio State University, Ph.D. ECE., 2019. Bangladesh University of Engineering and Technology, B.Sc., 2011

Area of Expertise and Interest Wide-bandgap and Ultra-widebandgap semiconductors (ß-Ga2O3, III-nitrides, Diamond), Defect characterization, Device fabrication, Radiation effects, Thermal management, Electronic materials and device development for high-voltage, space electronics, and quantum information processing

Research Laboratory Research Group Website: https://sites.google.com/view/esmat-farzana

Publications

• J. S. Speck and E. Farzana (Invited Editor), “Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications,” American Institute of Physics (AIP), New York, (2023).
• E. Farzana, S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, “Vertical PtOx/Pt/β-Ga2O3 Schottky Diodes with High Permittivity Dielectric Field Plate for Low Leakage and High Breakdown Voltage,”  Appl. Phys. Lett. 123, 192102 (2023). (Featured as Editor’s Pick in Applied Physics Letters).
• N. S Hendricks, E. Farzana, A. Islam, K. D. Leedy, K. Liddy, J. Williams, D. Dryden, A. Adams, J. S. Speck, K. Chabak, and A. J. Green, “Vertical metal-dielectric-semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown,” Appl. Phys. Express, 16, 071002, (2023).
• R. M. Cadena, D. R. Ball, S. Islam, A. Senarath, E. X. Zhang, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, and R. D. Schrimpf, “Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes,” 70(4), 363, IEEE Trans Nucl Sci, (2023). 
• K. S. Qwah, E. Farzana, A. Wissel, M. Monavarian, T. Mates, and J. S. Speck, “Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy,” APL Materials 10, 081107 (2022).
• E. Farzana, A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, “Oxidized Metal Schottky Contact with High-κ Dielectric Field Plate for Low-loss High-power Vertical β-Ga2O3 Schottky Diodes,” APL Materials 10, 111104 (2022). (Featured as Editor’s Pick in APL Materials).
• E. Farzana, F. Alema, W. Y. Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, “Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition,” Appl. Phys. Lett. 118, 162109 (2021).
• J. Wang, K. F. Jorgensen, E. Farzana, K. S. Qwah, M. Monavarian, Z. J. Biegler, T. Mates, and J. S. Speck, “Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches,” APL Materials 9, 081118 (2021).
• E. Farzana, J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J.  S. Speck, “Over 1 kV Vertical GaN-on-GaN p-n Diodes with Low On-Resistance using Ammonia Molecular Beam Epitaxy,” IEEE Electron Device Letters, 41 (12), 1806 (2020). (Featured as Editor’s Pick in IEEE Electron Device Letters).
• H. Ghadi, J. F. McGlone , C. M. Jackson , E. Farzana, Z. Feng, A. F. M. A. U. Bhuiyan, H. Zhao , A. R. Arehart , and S. A. Ringel, “Full bandgap defect state characterization of β-Ga₂O₃ grown by metal organic chemical vapor deposition,” APL Materials 8, 021111 (2020).

Primary Strategic Research Area

Advanced Materials & Manufacturing

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