Houqiang Fu

Title(s):

Assistant Professor

Office

3215 Coover
2520 Osborn Dr.
Ames, IA 50011

Information

Education

Ph.D. Electrical Engineering, Arizona State University (2019)

B.S. Materials Physics, Wuhan University (2014)

Research Areas

Core Areas: Wide Bandgap Semiconductors (GaN, Ga2O3, Al(Ga)N, Diamond), Power Electronics, Optoelectronics, RF/microwave Electronics, Photonics, Epitaxy Growth (MOCVD).

Department’s Strategic Areas: Materials, Devices and Circuits, Energy Infrastructure.

Research Group Website: https://www.ece.iastate.edu/houqiangfu/

Publications

Google Scholar Profile: https://scholar.google.com/citations?user=ixFlMokAAAAJ&hl=en

  • C. Yang, H. Fu, P. Y. Su, H. Liu, K. Fu, X. Huang, T. H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, X. Qi, F. A. Ponce, and Y. Zhao, “Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment,” Appl. Phys. Lett. 117, 052105 (2020).
  • H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Montes, J. Zhou, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “High voltage vertical GaN p-n diodes with hydrogen-plasma based guard rings,” IEEE Electron Device Lett. 41, 127 (2020).
  • S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, M. R. McCartney, and F. A. Ponce, “Determination of electronic band structure by electron holography of of etched-and-regrown interfaces in GaN p-i-n diodes,” Appl. Phys. Lett. 115, 201602 (2019).
  • H. Fu, K. Fu, H. Liu, S. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “Implantation- and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing,” Appl. Phys. Express 12, 051015 (2019).
  • K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Demonstration of 1.27 kV etch-then-regrow GaN vertical p-n junctions with low leakage for GaN power electronics,” IEEE Electron Device Lett. 40, 1728 (2019).
  • K. Fu, H. Fu, X. Huang, T. H. Yang, H. Chen, I. Baranowski, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold switching and memory behavior of epitaxial regrown GaN-on-GaN vertical p-n diodes with high temperature stability,” IEEE Electron Device Lett. 40, 375 (2019).
  • H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “A comparative study on the electrical properties of vertical (-201) and (010) β-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates,” IEEE Trans. Electron Devices 65, 3507 (2018).
  • Y. Zhao, H. Fu, G. T. Wang, and S. Nakamura, “Toward ultimate efficiency: Progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes,” Adv. Opt. Photonics 10, 246 (2018).
  • H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763 (2017).
  • H. Fu, I. Baranowski, X. Huang, H. Chen, Z. Lu, J. Montes, X. Zhang and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1kV,” IEEE Electron Device Lett. 38, 1286 (2017).

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